| PART |
Description |
Maker |
| HY57V16161 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
HYNIX
|
| M12S64322A09 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M12S64322A-6BG M12S64322A-6TG M12S64322A-7BG M12S6 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M12L64322A-5BG M12L64322A-5TG M12L64322A-6BG M12L6 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| A43L1632V-6 |
512K X 32 Bit X 4 Banks Synchronous DRAM
|
AMIC Technology Corporation
|
| M52D64322A-10BG |
512K x 32 Bit x 4 Banks Mobile Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| IC42S16102-6T IC42S16102-7T IC42S16102-7TI |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM 12k × 16位2银行6兆）内存
|
Rohm Co., Ltd.
Advanced Interconnections, Corp.
|
| M12L64322A-7T M12L64322A-6T |
512K x 32 Bit x 4 Banks Synchronous DRAM
PT 5C 5#16 SKT RECP
|
Electronic Theatre Controls, Inc.
|
| HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
SDRAM - 16Mb
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| M32L32321SA-5Q M32L32321SA-6F M32L32321SA-6Q M32L3 |
From old datasheet system
512K x 32 Bit x 2 Banks Synchronous Graphic RAM
|
ETC
|
| W986432AH W986432AHA1 |
512K x 4 BANKS x 32 BITS SDRAM
512K x 4 BANKS x 32 BITS SDRAM
From old datasheet system
|
Winbond Electronics
WINBOND[Winbond]
|
| MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
4M (512K X 8) BIT
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
